Episil-Precision offer epitaxial process of GaN-on-Si,
We develop a nitride semiconductor structure, which
grow plurality of AlGaN layers and GaN layers stacking
with each other.
The development of our own has patent protection,
and we offer 100V~600V 8' GaN/Si epi wafers.
Please refer to GaN/Si epitaxy for the detail.
New release: 8' GaN/Si