news - GaN/Si Epitaxy
Episil-Precision offer epitaxial process of GaN-on-Si, We develop a nitride semiconductor structure, which grow plurality of AlGaN layers and GaN layers stacking with each other.
The unique is difference between the thickness of the AlGaN layers that effectively reduce the strain produced by the mismatches of the lattice and the coefficient of thermal expansion between the GaN layer and silicon substrate. Therefore, epitaxial wafer fracture and defect formation can be improved, the device have higher performance and superior reliability.
The development of our own has patent protection, and we offer mass-production products, include 100V~600V 6” GaN/Si epi wafers. Please refer to GaN/Si Epitaxy.