Episil-Precision offer epitaxial process of GaN-on-Si, We develop a nitride semiconductor structure, which grow plurality of AlGaN layers and GaN layers stacking with each other.
The development of our own has patent protection, and we offer 100V~600V 8" GaN/Si epi wafers.
Please refer to GaN/Si epitaxy for the detail.
New release: 8" GaN/Si
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