• Episil-Precision offer epitaxial process of GaN-on-Si,
    We develop a nitride semiconductor structure, which
    grow plurality of AlGaN layers and GaN layers stacking
    with each other.

    The development of our own has patent protection,
    and we offer 100V~600V 8" GaN/Si epi wafers.

    Please refer to GaN/Si epitaxy for the detail.

    New release: 8" GaN/Si